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74LS258BN Datasheet
four Data Registers and the associated Wiper Control Register.Any data changes in one ofthe Data Registers is a non-volatile operation and will take a maximum of 10ms.
74LS258BN Price
1. Typical characteristics are at TA = 250C. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included 3. Fmax = 1/tRC .
74LS258BN on stock
Programming Interface Every code byte in the Flash array can be written and the entire array can be erased by using the appropriate combi- nation of control signals. The write operation cycle is self- timed and once initiated, will automatically time itself to completion.
Because the default for index register BAh, bit 4, is o at reset, onlyEMR will be asserted at boot time, and so therefore either the PCMCIA socket must be designed to use MEMR (rather than 7C~C ) or ajumper must route MEMR toE

INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ* Max Unit
EMITTER Input Forward Voltage (IF = 10 mA) VF 1.18 1.50 v
Reverse Leakage Current (VR = 6.0 V) IR O001 10 UA
DETECTOR Collector-Emitter Breakdown Voltage (lc = 1.0 mA, IF = 0) BVCEO 30 100 v
Collector-Base Breakdown Voltage (lc = 100 IJA, IF = 0) BVCBO 70 120 V
Emitter-Collector Breakdown Voltage (IE = 100 pA, IF = 0) BVECO 7 10 V
Collector-Emitter Dark Current (VCE = 10 V, IF = 0) ICEO 1 50 nA
Collector-Base Dark Current (VCB = 10 V) ICBO 20 nA
Capacitance (VCE = O V, f = 1 MHz) CCE 8 pF