| Parameter | Symbol | Values | Unit |
| Continuous drain current Tc = 25 0C | D | 21 | A |
| Pulsed drain current Tc = 25 0C | /Dpuls | 84 |
| Avalanche current,limited by Tjmax | /AR | 21 |
| Avalanche energy,periodic limited by Tjmax | EAR | 1 1 | mJ |
| Avalanche energy, single pulse /D = 21 A, VDD = 25 V, RGS = 25 L = 340 pH, Tj = 25 0C | EAS | 1 00 |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation Tc = 25 0C | Ptot | 75 | W |
| Operating temperature | Tj | -55+150 | C |
| Storage temperature | Tstg | -55+150 |
| Thermal resistance, chip case | RthjC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthjA | 75 |
| DIN humidity category, DIN 40 040 | | E | |
| IEC climatic category, DIN IEC 68-1 | | 55 /15056 |
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