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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
KMM594000A-8			12000		Samsung Electronic	Jetli Electronic HK Limited Contact:Jetchan Tel:86-754-84445458 Fax:86-754-84445458 Email: jetli@jetlielec.com

KMM594000A-8 Datasheet

Output 1 Uo nom /o nom lo max	Output 2 Uo nom lo nom ID max	Type Input Voltage 14.4...36 V DC	Type Input Voltage 21 .6...54 V DC	Type Input Voltage 35...75 V DC	Options
3.3 18 22 5.1 16 20 12 8 10 15 6.6 8 24 4.4 5.5 24 4 5 30 3.3 4 48 2.2 2.75		BQ 1101-7 BQ 1001-7R BQ 2320-7R BQ 2540-7R BQ 2660-7R BQ 2320-7R BQ 2540-7R BQ 2660-7R	GQ 1101-7 GQ 1001-7R GQ 2320-7R GQ 2540-7R GQ 2660-7R GQ 2320-7R G0 2540-7R GQ 2660-7R	CQ 1101-7 C0 1001-7R CQ 2320-7R CQ 2540-7R CQ 2660-7R CQ 2320-7R C0 2540-7R CQ 2660-7R	-9 -9, P -9, P -9, P -9, P -9, P -9, P -9, P
5.1 7.5 9.5 12 4 5 15 3.3 4 24 2.2 2.75	5.1 7.5 9.5 12 4 5 15 3.3 4 24 2.2 2.75	BQ 2001-7R BQ 2320-7R BQ 2540-7R BQ 2660-7R	GQ 2001-7R GQ 2320-7R GQ 2540-7R GQ 2660-7R	C0 2001-7R C0 2320-7R CQ 2540-7R CQ 2660-7R	-9, P -9, P -9, P -9, P

KMM594000A-8 Price

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with inde- pendent high and low side referenced output chan- nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction. The logic input is compatible with stan- dard CMOS or LSTTL output, down t0 3.3Vlogic. The output drivers feature a high pulse current buffer
KMM594000A-8 on stock

The FET is soldered using AuSn solder at 300 C for 30 secs. Input and Output matching networks are 0.381 mm ZrSn Tioxide substrates (Er = 38). The design load impedance is between 4 Q and 5 Q with the 6 pF output capacitance of the FETincluded in the output network. For further explanation refer to the application note "Designing High Efficiency Amplifiers using HFETs". The carrier plate is 0.51 mm gold plated copper molybdenum. Gold wire (0.018 mm) is used for the bonds. Four gate bonds are required with a length of 0.42 mm. Eight drain bonds are required with a length of 0.42 mm. Bondwire end points on the FET are in the middle of the bond pads. Refer to the figures above for bondwire locations. Connection between the 50 0hm line input to the input match is made by a parallel RC network. R1 in this network is 10 0hms, and Cl is 5.6 pF. The components used are surface mount 0603 piece parts.

The UM61512A is a low operating current 524,288-bit static random access memory organized as 65,536 words by 8 bits and operates on a single 5V power supply. It is built using UMC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures.

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