| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| LTM181E3-P01 | Toshiba | TFTLCD | 500 |
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| LTM181E3-P01 | 50 | specialize | Toshiba | 18.1 | 06+ |
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LTM181E3-P01 Price Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Inductive Load Handling Capability C-B Breakdown Voltage C-E Breakdown Voltage Turn-on Time Storage Time Fall Time LTM181E3-P01 on stock 1. CPD iS used to determine the dynamic power dissipation (PD in W) PD = CPD x VCC2 x fi + . (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; * (CL x VCC2 x fo) = sum of outputs; CL = output load capacitance in pF; Vcc = supply voltage in Volts. . UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching * IGBT Co-packaged with ultra-soft-recovery antiparallel diode . Industry standard D2Pak & T0-262 packages Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant 74LVCH2244A _inputs/outputs; damping resistor; 3-state 74LVC2244A |
