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suppliers of M67799LA and PDF data of M67799LA

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
M67799LA mitsubishi    07/08+  Factory stock, deliv  100 
    shenzhen cenyion technology co..
  • Contact:lin
  • Tel:86-755-83039750
  • Fax:86-755-83038946
  • Email: sales@cenyion.com
M67799LA MITSUBSHI    N/A    50 
    Mingjiada (HK) Industrial CO.,..
  • Contact:Mandy
  • Tel:86-755-83957301
  • Fax:86-755-83957753
  • Email: ic88999@gmail.com
M67799LA MITSUBSHI  Power modu  N/A  New & Original/stock  100 
M67799LA MITSUBSHI  Power modu  N/A  New & Original/stock  100 
    Mingjiada (HK) Industrial CO.,..
  • Contact:Chunming Chen
  • Tel:86-755-83957301
  • Fax:86-755-83957753
  • Email: sales@szmjd.com
M67799LA MITSUBSHI  MODULE  N/A    50 
    SHENZHENMINGJIADAELECTRONICSCO..
  • Contact:Ms.livyxu
  • Tel:86-0755-83957301
  • Fax:86-0755-83957753
  • Email: sales@szmjd.com
M67799LA 三菱        500 
    FINERCO.,LTD
  • Contact:Mr.TANG
  • Tel:+86-21-56327415
  • Fax:+86-21-56327435
  • Email: rf1@ic35.com.cn

M67799LA Datasheet

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M67799LA Price

Parameter Symbol Values Unit
Collector-emitter voltage VCE 1 700 V
Collector-gate voltage RGE = 20 kl VCGR 1 700
Gate-emitter voltage E ±20
DC collector current TC = 25 aC TC = 80 aC C 1 1 0 75 A
Pulsed collector current, tp = 1 ms TC = 25 aC TC = 80 aC /Cpuls 220 1 50
Power dissipation per IGBT TC = 25 aC Ptot 625 W
Chip temperature Tj +150 oC
Storage temperature Tstq -55+150


M67799LA on stock

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4.C S u 3.C Ta -IF W1 DI j BK j iting \l I 100 10 1 VF -l F( ha iracter / / \r isti cs (Typ ical 10C 9c u 8C 7C §6C 5C IFN l IS Ri itin g L )mS
0 2.C C 01 cn 4C
Ta= 150 3C
1.C N 0 01 f | | | 1001C 2 51C 2C 1c
0 25 50 60 75 100 125 150 0 0.2 04 06 0.8 10 1 5 10 50 Ambient Temperature Ta (1C) Forward Voltage VF (V) Overcurrent Cycles
3 1 Ta -IF( AV)Derating N 0·1tCU 50 10 < VF F CharC ccterif ,tic S r Fypi calj 7C S 60 IFN IS Ri It n g L 20ms
2 c j N 1 c (J rl XTa=150IC = 5C a 40 o 3C j j ~
11 c o) |I E 0.1 o LL 0.01 1001C - 601C - 25YC : III 20 x 1C |
J III 0 25 50 60 75 100 125 150 0 04 0.8 12 16 2.0 1 5 10 50 Ambient Temperature Ta (1C) Forward Voltage VF (V) Overcurrent Cycles 3 0 S 2 5 2 0 1_5 .1 0 g 0 5 Ta-IF{AV) Derating


Characteristics Symbol Rating Unit
Drain-source voltage VDSS -30 V
Drain-gate voltage (RGS = 20 k(l) VDGR -30 V
Gate-source voltage VGSS +20 V
DC (Note 11 ID -5 A
Drain current Pulse (Note l) IDP -20
Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W
Drain power dissipation (t = 10 s) (Note 2b) PD 1O W
Single pulse avalanche energy (Note 3) EAS 32.5 mJ
Avalanche current IAR -5 A
Repetitive avalanche energy (Note 2a) (Note 4) EAR 0 24 mJ
Channel temperature Tch 150 oc
Storage temperature range Tstg -55 t0 150 oc


 
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