| | BCF 29, BCF 30 |
| Collector-Emitter-voltage B open | - VCEO | 32 V |
| Collector-Base-voltage E open | - VCBO | 32 V |
| Emitter-Base-voltage C open | - VEBO | SV |
| Power dissipation - Verlustleistung | Ptot | 250 mW 11 |
| Collector current - Kollektorstrom (DC) | - Ic | 100 mA |
| Peak Collector current - Kollektor-Spitzenstrom | - ICM | 200 mA |
| Peak Base current - Basis-Spitzenstrom | - IBM | 100 mA |
| Junction temperature - Sperrschichttemperatur | Tj | 150C |
| Storage temperature - Lagerungstemperatur | Ts | -65+150C |
| | |
| SYMBOL | PARAMETER | VALUE | UNIT |
| Rthja | thermal resistance from junction to ambient in free air | 90 | K/W |
| | | |
Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, oering simplified sys- tem assembly and thermal man- agement.
