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MI-P7R-MYV Datasheet

Collector to base breakdown voltage V(BR)CBO 15 V le = 10 , IE = O
Collector cutoff current ICBO 1 VCB = 12V , IE = O
Collector cutoff current ICEO 1 mA VCE = 6V , RBE =
Emitter cutoff current IEBO 10 cCA VEB = 1.5V , lC = 0
DC current transfer ratio hFE 80 120 160 V VCE = 1V , lC = 5mA
Collector output capacitance Cob 1.4 1.9 pF VCB = 1V , IE = 0 f= 1MHz
Gain bandwidth product fT 2 5 GHz VCE = 1V , lC = 5mA
Power gain PG 6 9 dB VCE = 1V, lC = 5mA f= 900MHz
Noise figure NF 1.1 1.9 dB VCE = 1V, lC = 5mA f= 900MHz


MI-P7R-MYV Price

III Tch = 250C l l l
-ID =7 A /DS =bL V-
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20 OV
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MI-P7R-MYV on stock

Symbol Parameter Value Unit
VDD Supply Voltage: HCC Types HCF Types -0.5 to +20 -0.5 to +18 V V
Vi Input Voltage -0.5 to VDD + 0.5 V
lI DC Input Current (any one input) ±10 mA
Ptot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range 200 100 mW mW
Top Operating Temperature: HCC Types HCF Types -55 to +125 -40 to +85 oC oC
Tstq Storage Temperature -65 to +150 oC


lTa=75
%
:i a ~~ Ta=250CF -] Ta:-250C . IIII IIII
L L 1 r