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MVT212016PL35 Datasheet
Notes: a. Leakage parameters are guaranteed by worst case test conditions and not subject to production test. b. Room = 250C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
MVT212016PL35 Price

- vcc = 300V : : :: - VGE = +15V ! ! ! !
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MVT212016PL35 on stock

Characteristic Symbol Test condition Min Typ. Max Unit
Drain-source breakdown voltage BVDSS VGS=OV, ID=50UA 800 V
Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=OV 50 A
VDS=0.8Max., Rating, VGS=OV, Tc=1250C 200 A
Static drain-source on resistance(note) RDS(ON) VGS=10V, ID=1.5A 4.0 5.0 Q
Forward transconductance (note) gfs VDS=15V, ID=1.5A 1.5 2.5 mho
Input capacitance Ciss VGS=OV, VDS=25V, 779 pF
Output capacitance Coss f=lMHz 75.6
Reverse transfer capacitance Crss 24.9
Turn on delay time td(on) VDD=0.5BVDSS, ID=3.OA 40 nS
Rise time tr (MOSFET switching time are essentially 95
Turn o delay time td(off) independent of 1 50
Fall time tf operating temperature) 60
Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=3.OA, VDS=0.5BVDSS (MOSFET 34 nC
Gate-source charge Qgs switching time are essentially independent of 7.2
Gate-drain (Miller) charge Qgd operating temperature) 12.1


2. Maximum inpul power without damage for all amplifiers is +20 dBm CW. 3. All specified temperatures are case temperatures. All amplifiers Amplifier Cases Celcritek cases use welded seals, and glass-to-metal feed-thru's, providing a high-reliability case which meets the gross and fine leak requirements for military applications. AIJ case types include "K" type field-replaceable connectors. 2.4 mm coaxial connectors or waveguide innerface connections are available as an option.