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MVX28ET Datasheet
The 2SA1647 is a mold power transistor developed for high- speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
MVX28ET Price

f (GHz) Zin(Q) Zoui(Q)
1 42 3.9+ j11.5 10.2 - j17.1
1 51 3.9+ jll.0 9.5 - j16.2
1 55 4.1+ j15.2 9.3 - j14.3 Zo= 50 SZ


MVX28ET on stock

Limits
Symbol Parameter Test conditions Min Typ Max Unit
ICES Collector cutoff current VCE = VCES, VGE = OV 1 mA
VGE(th) Gate-emitter threshold voltage lc = 20mA, VCE = 10V 6 7 8 v
IGES Gate leakage current VGE = VGES, VCE = OV 0 5
Collector-emitter saturation Tj= 25IC 2 1 3 0 V
VCE(sat) voltage Tj= 125IC lc = 200A, VGE = 15V 2 4
Cies Input capacitance 35
Coes Output capacitance VCE = 10V 3 nF
Cres Reverse transfer capacitance VGE = OV 0 68
QG Total gate charge Vcc = 600V, lc = 200A, VGE = 15V 1000 nC
td(on) Turn-on delay time 130
tr Turn-on rise time Vcc = 600V, lc = 200A 100
td(off) Turn-o delay time VGEI = VGE2 = 15V 450 ns
tf Turn-o fall time RG = 1.6 I , Inductive load switching operation 350
trr (Notel) Reverse recovery time IE = 200A 150 ns
C>rr (Notel) Reverse recovery charge 9 0 ccc
VEC(Note 11 Emitter-collector voltage IE = 200A, VGE = OV 3 8 V
RthO-c)Q IGBT part (1/2 module)'i 0 093
RthO-c)R Thermal resistance FWDi part (1/2 module f l 0.17 IC/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compound Applied (1/2 module)'1,'2 0 022
RG External gate resistance 1 6 21