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MW-825H05B Datasheet

/oin ibUYF'LY = 40V
' vSUF'FY jr =15V * = 3V
VSUPPLY . ) j
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MW-825H05B Price
ife Note 2: The LTC1731-4.2 is guaranteed to meet performance specifications from OIC t0 70rC. Specifications over the -40rC t0 85rC operating temperature range are assured by design, characterization and correlation with statistical process controls. Guaranteed I grade parts are available, consult factory.
MW-825H05B on stock
The power good circuit supervises the output voltage. In case Vo falls below the Power Good switching threshold the Power Good output PG is set LOW after the power good reaction time. The power good LOW signal is generated down to an output voltage Vo t0 1 V. A LOW signal at the power good pin informs that the battery was lost and memory is no longer valid.

Characteristic Symbol Min Typ Max Unit
Peak Forward or Reverse Blocking Current (Rated VDRM or VRRM, gate openi TC = 250C TC = 100'C IDRM, IRRM 10' f^ mA
Forward "On" Voltage (ITM = 100 A Peak, Pulse Width < 1 ms, Dury C'Icle s 2%) VTM '9 - Volts
Gate Trigger Current, MCR230, MCR230t l3, C232 series (VD = 12 Vdc. RL = 120 0hmsJ (VD = 12 Vdc, RL -. 60 0hms) ' TC = -40aC IGT 1 _25 40 mA
Gate Trigger Current. MCR231, MCR231{ J3, C233 (Continuous dc) (VD = 12 Vdc, RL = 120 0hms) (VD = 12 Vdc. RL = 60 0hms) TC = -40'C IGT 9- - 20 mA
Gate Trigger Voltage (Continuous dc} (VD = 12 Vdc, RL = 120 0hms) (VD - 12 Vdc. RL = 60 0hms) TC = -400C (VD = Rated VDRM, RL = 1000 0hms) TC = +lOOoC VGT 0.2 1.6 2 'Volts
Holding Current (VD = 24 V, gate open,IT = 0.5 A) TC = -40'C IH 50 100 mA
Turn-On Time {rd + tr} (ITM = 25 Adc, IGT = 40 mAdc, VD = Rated VDRMl tgt 1 _S
Turn-Oft Time {ITM = 10 A.IR = 10 A, Pulse Width = 50 ys, d-ndt = 20 V,ys, VD = Rated VDRM) TC = lOOoC tq 25 35 LS
Forward Voltage Application Rate {VD = Rated VDRMl TC = lOOoC dWdt 100 V_S