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MW145574DW Datasheet
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Gp power gain f= 50 MHz 18 18.5 19 dB
f= 750 MHz 18.5 19.7 dB
SL slope cable equivalent f= 40 t0 750 MHz 0.2 1.3 2 dB
FL flatness of frequency response f= 40 t0 750 MHz +0.2 +0.5 dB
S11 input return losses f= 40 t0 80 MHz 20 27 dB
f= 80 t0 160 MHz 19 30 dB
f= 160 t0 320 MHz 18 29 dB
f = 320 t0 640 MHz 17 22 dB
f= 640 t0 750 MHz 16 21 dB
S22 output return losses f= 40 t0 80 MHz 20 23 dB
f= 80 t0 160 MHz 19 24 dB
f= 160 t0 320 MHz 18 23 dB
f = 320 t0 640 MHz 17 21 dB
f= 640 t0 750 MHz 16 21 dB
S21 phase response f= 50 MHz -45 +45 deg
CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz -59 -58 dB
Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz -64 -62 dB
CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz -63 -58 dB
d2 second order distortion note l -78 -68 dB
Vo output voltage dim = -60 dB; note 2 61 64 dBmV
NF noise figure f= 50 MHz 4.5 5.5 dB
f= 450 MHz 6.5 dB
f= 550 MHz 6.5 dB
f= 600 MHz 7 dB
f= 750 MHz 6.5 8.5 dB
ltot total current consumption (DC) note 3 425 435 mA


Parameter Symbol Min Typ Max Unit Test Conditions
Gate-Source Leakage IGSS 10 oA VGs=20V, VDs=OV
Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=lmA, VGs=OV
Zero Gate Voltage Drain Current IDSS 1 o VDs=30V, VGs=OV
Gate Threshold Voltage VGS (th) 1 0 2 5 V VDs=lOV, ID=lmA
Static Drain-Source On-State 11 15 ID=9A, VGs=lOV
Resistance RDSfon) 15 22 mQ ID=9A, VGs=4.5V
17 24 ID=9A, VGs=4V
Forward Transfer Admittance l YfsI 8 6 0 s ID=9A, VDs=lOV
Input Capacitance Ciss 810 pF VDs=lOV
Output Capacitance Coss 225 pF VGs=OV
Reverse Transfer Capacitance Crss 160 pF f=lMHz
Turn-On Delay Time td(on) 4 10 ns ID=4.5A, VDD- 15V
Rise Time tr 4 13 ns VGs=lOV
Turn-Off Delay Time td(off) 4 46 ns RL=3.33C2
Fall Time tf 4 15 ns RGS=IOQ
Total Gate Charge Qg 4 11 15 nC VDD=15V
Gate-Source Charge Qgs 4 2 5 nC VGs=5V
Gate-Drain Charge Qgd 8 4 5 nC ID=9A