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MX1V-TK Datasheet

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MX1V-TK Price

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
Vcc	DC supply voltage		-0.5	+7.0	V
IIK	DC input diode current	Vl < -0.5 V or Vi > Vcc + 0.5V		±20	mA
IOK	DC output diode current	VO < -0.5 V or Vo > Vcc + 0.5V		±50	mA
IO	DC output source or sink current - standard outputs	-0.5V < VO < VCC +0.5V		±25	mA
±IGND ±lcc	DC Vcc or GND current for types with - standard outputs			±50	mA
Tstg	Storage temperature range		-65	+150	YC
Ptot	power dissipation per package - plastic DIL - plastic mini-pack (SO) - plastic medium-shrink SO (SSOP and TSSOP)	for temperature range: -40 to +125YC above +70YC derate linearly with 12 mW/K above +701C derate linearly with 8 mW/K above +60YC derate linearly with 5.5 mW/K		750 500 400	mW

MX1V-TK on stock

Notes: (1) Reverse recovery test conditions: IF=0.5A, IR=1.OA. Iff=0.25A (2) Measured at l.OMHz and applied reverse voltage of4.0 volts (3) Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27X0.2T (7.OX7.Omm) copper pad areas

Electrical Characteristics Unless otherwise noted, TA= 25 0C, 4.5V " Vcc " 25V . All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channe Symbol Parameter Test Conditions Min Typ Max Units

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