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MX27C2000 Datasheet
These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc- tor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
MX27C2000 Price

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kl 60 V
VGS Gate-source Voltage ±20 V
ID Drain Current (continuous) at Te = 25 0C 16 A
ID Drain Current (continuous) at Te = 100 0C 1 1 A
IDM Drain Current (pulsed) 64 A
Ptot Total Dissipation at Te = 25 0C 40 W
Derating Factor 0.26 w/oC
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 t0 175 oC
Ti Max. Operating Junction Temperature 1 75 oC


MX27C2000 on stock

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