MX29F022BTC-90 Datasheet| | | | | | | | Tc= 250C | | l | JD= | 90 | | | | | Pule | e l E | }st - | | 1 | | | | VGS | = 20V 10V | | | | | | l | | | | | 8V | | + | - | | | | | | | | | | | | | | | ~ | | r | | | | 6 | V - | | | | | __ | | | | | | | | | | | | | | | | | | | j | | | | | | | | 5V - -l- - | | jj | | | | | | | | | | | | | | | | | | | | |
MX29F022BTC-90 Price| | Parameter | Min | Typ. | Max | Units | Conditions | | V(BR)DSS | Drain-to-Source Breakdown Voltage | 600 | | | V | VGS = OV, ID = 250pA | | RDS(on) | Static Drain-to-Source On-Resistance | | | 7O | Q | VGS = 10V, ID = 0.84A | | VGS(th) | Gate Threshold Voltage | 2.0 | | 4O | V | VDS = VGS, ID = 250pA | | | | | | 25 | uA | VDS = 600V, VGS = OV | | IDSS | Drain-to-Source Leakage Current | | | 250 | VDS = 480V, VGS = OV, TJ = 1500C | | | Gate-to-Source Forward Leakage | | | 100 | | VGS= 30V | | IGSS | Gate-to-Source Reverse Leakage | | | -100 | nA | VGS= -30V | | | | | | | |
MX29F022BTC-90 on stock| Electrical Characteristics | | Average forward current I F(AV) 1.0 Amps TL = 1350C, Square wave, R&JL = 15'C/W, L = 1/4" Moximum surge current I FSM 35 Amps 8.3ms, half sine, TJ = 1750C Max peak forward voltage VFM .75 Volts IFM = O.lA:Tj = 250C* Max peak forward voltage YFM .95 Volts FM = l.OA:Tj = 250C* Max reverse recovecruyrrter:te tRR 30 ns '/2. ,A. 1/4A. Tj = 250, Max peak reverse cur I RM 5/uA RRM,Tj = 250C Typical junction capacitance Cj 10 pF VR = lOy,Tj = 250C *Pulse test: Pulse width 300 /usec, Duty cycle 2% |
READ: The AT49BV/LV1024A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention.
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