| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| MX29F8100MC-120 | N/A | 3695 |
|
MX29F8100MC-120 Datasheet
MX29F8100MC-120 Price Note : 1.VREF is expected to be equal t0 0.5'VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT iS not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID iS the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V t0 1.OV. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed l/7 for device drain to source voltages from 0.1 t0 1.0. MX29F8100MC-120 on stock
4. If active devices are used to ground the voltage control pins, low-level open drain MOSFETs should be used over bipolar transistors. The inherent Vce(sat) in bipolar devices introduces errors in the device's internal voltage control circuit. Discrete transistors such as the BSS138, 2N7002, IRLML2402, are examples of appropriate devices. |
|||||||||||||||||||||||||||||||||||||||||||||||||||||
