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MX29L1610T Datasheet
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
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NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHz(Max.) is less than tLz(Min.) both for a given device and from device to device interconnection. 3. tOE(max) is met only when OE becomes enabled after tAA(max). 4. If invalid address signals shorter than min. tRC are continuously repeated for over 4us, the device needs a normal read timing(tRC) or needs to sustain standby state for min. tRC at least once in every 4us.
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SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Per diode
Ppp peak pulse power 8/20 ffS pulse; notes l and 2 25 W
lpp peak pulse current 8/20 ~s pulse; notes l and 2 2.5 A
Tj junction temperature 150
Tamb operating ambient temperature -65 +150 ][C
Tstg storage temperature -65 +150


differential output voltage change in differential voltage magnitude between logic states Steady-state common-mode output voltage Change in steady-state common-mode output voltage between logic states Peak-to-peak common-mode output voltage Supply current