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MX29LV033A-70 Datasheet
Connect a capacitor of 1000 pF across pins ODD and for external disturbance path. Be careful of the ground line artwork when laying out the printed circuit pattern. Arrange so that the Sg route and load current flow-in route do not overlap. Refer to the recommended printed circuit pattem or make slits, etc. at pins and
MX29LV033A-70 Price

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MX29LV033A-70 on stock
GENERAL DESCRIPTION The SSM2275 and SSM2475 use the Butler Amplifier front end, which combines both bipolar and FET transistors to offer the accuracy and low noise performance of bipolar transistors and the slew rates and sound quality of FETs. This product family includes dual and quad rail-to-rail output audio amplifi- ers that achieve lower production costs than the industry stan- dard OP275 (the first Butler Amplifier offered by Analog Devices). This lower cost amplifier also offers operation from a single 5 V supply, in addition to conventional+15 V supplies. The ac performance meets the needs of the most demanding au- dio applications, with 8 MHz bandwidth, 12 V/ccS slew rate and extremely low distortion.

Max
Parameter Symbol F6 FB F5 Units Notes
Operating Current One bank Read or Write operation; tCK = min, IRC = min, IOUT = OmA; Burst Length = 4, CAS Latency = 6, Free running QS mode; OV i VIN i VIL(AC) (max.), VIH(AC)(rTiin.) .< VIN < VDDQ; Address inputs change up t0 2 times during minimum IRC, Read data change twice per clock cycle IDDIS 320 300 280 1 2
Standby Current All Banks : inactive state; tCK=rTiiri, CS = VIH, PD = VIH; OV i VIN i VIL(AC)(max.), VIH(AC)(rTiin.) .< VIH < VDDQ; Other input signals change one time during 4*tCK, DQ and DS inputs change twice per clock cycle IDD2N 100 95 90 1
Standby (Power Down) Current All Banks : inactive state; tCK=rTiin, PD = VIL (Power Down); CAS Latency = 6, Free running QS mode; OV i VIN i VIL(AC)(max), VIH(AC)(criin) .< VIN < VDDO; Other input signals change one time during 4*tCK, DQ and DS inputs are floating(VDD0/2) IDD2P 70 65 60 1
Write Operating Current(4 Banks) 4 Bank intereaved continuous burst write operation; tCK = criin, IRC =min; Burst Length = 4, CAS Latency = 6, Free running QS mode; OV i VIN i VIL(AC) (max.), VIH(AC)(rriin.) .< VIN < VDDQ; Address inputs change once per clock cycle, DQ and DS inputs change twice per clock cycle IDD4W 650 600 550 mA 1
Read Operating Current(4 Banks) 4 Bank intereaved continuous burst write operation; tCK = min, IRC = min, IOUT = OmA; Burst Length = 4, CAS Latency = 6, Free running QS mode; OV i VIN i VIL(AC) (max.), VIH(AC)(rTiin.) .< VIN < VDDQ; Address inputs change once per clock cycle, Read data change twice per clock cycle IDD4R 650 600 550 1,2
Burst Auto-Refresh Current Refresh command at every IREFC interval; tCK = criin, IREFC=mici; CAS Latency = 6, Free running QS mode; OV i VIN i VIL(AC) (max.), VIH(AC) (ffiin.) .< VIN < VDDQ; Address change up t0 2 times during minimum IREFC, DQ and DS inputs change twice per clock cycle IDD5B 250 235 210 1,3