TI > Map-22 > MX29LV160ABTI70

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MX29LV160ABTI70 Datasheet

n	Description
00	Numbers are not printed
01	Numbers are printed at the top of the barcode
02	Numbers are printed at the bottom ofthe barcode
03	Numbers are both printed at the top and the bottom

MX29LV160ABTI70 Price

Vottage gain	Gv	31	37	43	dB	Vi AF1 TliV
Min. load resistance	Rq2	1			kQ
Input impedance	Ri	10			kQ
Signal-to-noise	aSiN		40		dB
Total harmonic distortion2}	THD		2		%

MX29LV160ABTI70 on stock

Features: +250C to +1800C Operation . Ultra-Low Voltage Drift . Low Offset Voltage . Low Nonlinearity . Low Noise . High CMR . High Input Impedance	Applications: . Amplification of signals from sources such as: Strain Gages Thermocouplers RTDs . Low Level Signals . Medical Instrumentation

Parameter		Symbol	Ratings	Unit
Collector to base voltage		VCBO	-130	V
Collector to emitter voltage		VCEO	-80	v
Emitter to base voltage		VEBO	-7	v
Peak collector current		ICP	-6	A
Collector current		Ic	-j	A
Collector power	Tc=25IC	Pc	30
dissipation	Ta=25 YC	Pc	1.3	W
Junction temperature		Ti	150	C
Storage temperature		Tstg	-55 to +150	C