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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
MX29LV400TT-70      

MX29LV400TT-70 Price

Limits
S\imbO Parameter Min TVp Max Unit
ICEX Collector cutoff current VCE=600V, VEB=2V 1 0 rnA
ICBO Collector cutoff current VCB=600V, Ernitter open 1 0 rnA
IEB Emitter cutoff current VEB=7V 200 mA
VCE (satl Collector-emitter satu ration voltage 2 0 V
VBE (satl Base-emitter saturation voltage lc=30A, IB=0.4A 2 5 V
-VCE Collector-emitter reverse voltage -lc=30A 1diode forward voltage} 1 85 V
hFE DC current gain lc=30A, VCE=2V/5V 75/100
ton 1 5
ts Switching time Vcc=300V, lc=30A, IBn =-IB2=0 6A 12
tf 3 0
Rth lj-cl0 Thermal resistance Transistor part 0 5 YC/W
Rth lj-c)R (junction to case) Diode part 2 0 YC/W
Rth lc-f) Contact thermal resistance (case to fin) Conductive grease applied 0 1 5 YC/W


MX29LV400TT-70 on stock

SPECIFICATIONS (TJ = 250C UNLESS OTHERW SE NOTED)
Parameter Symbol Test Conditions Simulated Data Measured Data Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 VA 1 9 V
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V 205 A
VGS = -10 V, ID = -9 A 0 022 0 022 n
Drain-Source On-State Resistancea rDS[on) VGS = -4.5 V, lo = -5 A 0 033 0 032
Forward Transconductancea gfs VDS = -15 V, ID = -2.5 A 10 14 s
Diode Forward Voltagea VSD Is = -2.9 A, VGS = O V 0 82 0 80 V
Dynamic'
Total Gate Charge Qg 41 42
Gate-Source Charge Qgs VDS = -15 V, VGS = -10 V, ID = -9 A 8 5 8 5 nC
Gate-Drain Charge Qgd 7 5 7 5
Turn-On Delay Time td(on) 20 18
Rise Time t VDD = -15 V, Ru = 15n 28 29
Turn-Off Delay Time td(off) ID - -1 A, VGEN = -10 V, RG = 6 n 32 65 ns
Fall Time tf 58 27
Source-Drain Reverse Recovery Time t rr IF = -2.9 A, di/dt = 100 A/Us 40 50


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