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MX29LV401TXBI-90 Datasheet

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| ////l i' RMS Limit
| j
4 I --- D = 0.01 -_ n - n ni --- D = 0.05 -_n-ni ·J
|j rj D= 0.2 n=n.5
DC jj
0 5 10 15 20 25 Average Forward Current-IF(AV) (A) Fig.6-Forward Power Loss Characteristics


MX29LV401TXBI-90 Price
Frequency aging is the change in fc with time and is specified at +650C or less. Aging may exceed the specification for prolonged temperatures above +650C. Typically, aging is greatest the first year after manufacture, decreasing significantly in subsequent years. The frequency fc is the frequency of minimum IL with the resonator in the specified test fixture in a 50 Q test system with VSWR i l.2:1. Typically, fOSCILLATOR or fTRANSMITTER is less than the resonator fc. One or more of the following United States patents apply: 4,454,488; 4,616,197. Typically, equipment utilizing this device requires emissions testing and government approval, which is the responsibility of the equipment manufac- tu re r. Unless noted otherwise, case temperature Tc = +25'C+ 50C The design, manufacturing process, and specifications of this device are subject to change without notice. Derived mathematically from one or more of the following directly measured parameters: fc, 11, 3 dB bandwidth, fc versus Tc, and Co. Turnover temperature, To, is the temperature of maximum (or turnover) frequency, fo. The nominal frequency at any case temperature, Tc, may be calculated from: f = fo [1 - FTC (To - TC)2]. Typically, oscillator To is 200 less than the specified resonator To. This equivalent RLC model approximates resonator performance near the resonant frequency and is provided for reference only. The capacitance co is the measured static (nonmotional) capacitance between either pin l and ground or pin 2 and ground. The measurement includes case parasitic capacitance.
MX29LV401TXBI-90 on stock

_0.2 _ _______ -_ __I__=_ __r -r
--4 _ 7
0.0: 0.0 -/- )-_ rF = NGLE F iMAL R )ULS ESPi 0NSE P J- +t 1- t-
Notes
1 Duty factor D = tl /t 2 2 PeakTj=P DMX ZthjC +TC


Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO Ic = lOhiA, IE = 0 60 V
Collector to emitter voltage VCEO Ic = 2rriA, IB = 0 50 V
Emitter to base voltage VEBO IE = 10UA, Ic = 0 7 V
ICBO VCB = 20V, IE = 0 0.1 LLA
Collector cutoff current ICEO VCE = 10V,IB = 0 100 UA
Forward current transfer ratio hFE VCE = IOV,IC = 2mA 160 460
Forward current transfer hFE ratio hFE (smaIJ/Jarge)" VCE = IOV,IC = 2mA 0.5 0.99
Collector to emitter saturation voltage VCE(sal) Ic = lOOmA,IB = lOmA 0.1 0.3 V
Transition f'requency fr VCB = 10V, IE = -2mA, f = 200MHz 150 MHz
Collector output capacitance Coh VCB = 10V, IE = 0, f = 1MHz 3.5 pF