| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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MX29LV800BTC70 Datasheet The K9KIG08UOA is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200Us on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8 device) or word(X16 device).. The l/0 pins serve as the ports for address and data input/output as well as command inputs. The on- chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and mar- gining of data. Even the write-intensive systems can take advantage of the K9KIG08UOA's extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9KIG08UOA is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. MX29LV800BTC70 Price Notes: 1. An initial pause of 200ys is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. 2. VIHW,m and Vw are reference levels for measuring timing of input signals. Transition tlmes are measured between VIHW and Vlumax, and are assumed to be 5ns for all inputs. 3. Measured with a load equivalent t0 2 TTL loads and lOOpF. 4. Operation within the tRCOWax, limit insures that tm\Cwax, can be met. tRCOWao IS speclfjed as a reference point only. If tRCO iS greater than the specified tRCOWao limit, then access time Is controlled exclusively by tCAC. 5. Assumes that trico>tRCOWaxl. 6. t.,n, tWCR, tOHR are referenced to tFU,OWa0 7. This parameter defines the time at which the output achieves the open circuit condition and Is not referenced to VOH or VOL. 8. twcs is non restrictive operatlng parameter. It is included in the data sheet as electrical characteristic only. If twcs> twcsw.m the cycle is an early write cycle and the data out pln will remaln hIgh Impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the ~AS leadIng edge in early write cycles. 11. Operation within the tAOWu, lImIt Insures that tRAqmax) can be met. t~OWaq IS specIfied as a reference point only. If tfUO iS greater than the specified tmxoWaU lImit, then access time Is controlled by t. MX29LV800BTC70 on stock Note l: Input voltages may exceed the supply voltages, provided the input current is limited to +lmA Note 2: Dissipation rating assumes device is mounted with all leads soldered to printed circuit board Stresses above those listed under 'Absolute Maximum Ratings" may cause permanent damage to the device These are srress rarings only and functional opera'tion of the device at these or any other conditions above those indicated in the operational sections of tha spEccfications is nor implied. Exposure r absolu(e maximum rating conditions for extended periods may affect device reliability Description . Compact footprint for high density, high current/low voltage applications . Foil technology that adds higher reliability factor over the traditional magnet wire used for higher frequency circuit designs . Frequency Range up t0 1MHz Applications . Next generation microprocessors . Energy storage applications . DC-DC converters . Computers Environmental Data |
