TIMap-22  > MX507A

suppliers of MX507A and PDF data of MX507A

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

MX507A Datasheet

Characteristic Symbol SBL1025L SBL1030L Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 25 30 V
RMS Reverse Voltage VR(RMS) 18 21 V
Average Rectified Output Current @ Tc = 1200C 10 10 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 200 A
Typical Thermal Resistance Junction to Case (Note l) RejC 3 0 oc/w
Operating and Storage Temperature Range Tj,TSTG -55 to +150 oC


MX507A Price
The R00064N is the first self-scanned photodiode array avallable In a circular conflguratlon.The device willfind appli- cation in such fields as tracking, allgnment, pattern recognl- tion,lnspection, and automatic facusing.Same salient features of the ROQ064N Include: * 64 elements equally spaced on a2 mm diameter cirde * 0.1 mm x 0.1 mm indlviduaJ element size ~ Charge storage mode operation for high sensitivity. * Integrated ring counter scanning clrcult * Requires simple driw and output clrcurtry * Wlde range of clock rates-2 KHz t0 2.5 MHz * 30 t0 40,000 complete circular scans per second. * Standard 16 lead dual-in-line package with sealed glass window.
MX507A on stock

PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.0055 @ VGS = 10 V 20
20 0.0085 @ VGS = 4.5 V 16


9. Device is continuously selected. OE, CEi = VIL. CE2 = VIH. 10. WE is HIGH for read cycle. _ 11. Data l/0 is High Z if OE = VIH, CEi = VIH, WE = VIL, or CE2=VIL. _ 12. The internal write time of the memory is defined by the overlap of CEl LOW, CE2 HIGH and WE LOW. CEl and WE must be LOW and CE2 must be HIGH to initiate write. A write can be terminated by CEi or WE going HIGH or CE2 going LOW. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 13. During this period, the l/Os are in the output state and input signals should not be applied.