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MX574AKD MX574AKD MX574AKD Datasheet

Test Conditior		@IF=5mA
Peak Wavelength	Luminous Intensity	Forward Voltage
		02.6^ 2.7
	AO : 5^9	12.7^ 2.8
a460^ 473		22.8^ 2.9
	A : 9^ 22	32.9^ 3.0
		43.0^ 3.1
		53.1^ 3.2
b473^ 485		63.2^ 3.3
	B : 22^ 40	73.3^ 3.4
		83.4^ 3.5

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All thermal impedance data is approximate for static air conditions at lW of power dissipation. Values will change depending on operation conditions and application. See the Intel Packaging Handbook (order number 240800) for a description of Intel's thermal impedance test methodology.
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GENERAL DESCRIPTION The KIS321611C is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.

ltem	Symbol	Path	RF frequency	VCTL	Min.	Typ.	Max.	Unit	Measurement condition
Current	IDD			H		1.9	2.5
consumption	IDD			L		1.9	2.5	mA	When no
				H		55	80		signal
Control current	ICTL			L	1	0		UA	signal
		RFIN1} RFOUT	fRF1	H	1 5	16.5	1 9
		RFIN1} RFOUT	fRF1	L		-20	-15
Power gain	Gp			H		-26	-21	dB	When a
Power gain	Gp	RFIN2} RFOUT	fRF2	L	1 5	17	19	dB	small signal
		RFIN1} RFOUT	fRF1	H		1.5	2
Noise figure	NF	RFIN2} RFOUT	fRF2	L		1.5	2	dB
		RFIN1} RFOUT	fRF1	H	1 1	-7.5
Input lP3	IIP3	RFIN2} RFOUT	fRF2	L	-12.5	-9		dBm	1
		RFOUT} RFIN1	fRF1	H	1 7	22			When a
Isolation	lso	RFOUT} RFIN2	fRF2	L	1 8	23		dB	small signal

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