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MX7524JP MX7524JP MX7524JP Price
ANG -24.6 -46.1 -64.7 -79.7 -93.2 -104.1 -112.5 -119.8 -126.2 -133.6 -138.8 -144.3 -150.3 -15 6 .1 -162.0 -168.6 -175.3 178.1 170.9 164.5 158.7 153.4 14 8.6 14 5.3 141.9 139.9 138.2 136.5 134.9 133.6
MX7524JP MX7524JP MX7524JP on stock

Pre-Radlation ElectrIcal Speclflcatlons TC =+2S'C, Unless Ottwrwise Specified
LIMITS
PARAMETER SYlIBOL TEST CONDITIONS MIN MAX UNITS
Drain-Source Bmakdown Volts BVDSS VGS = O, JD = 1mA 1 V
Gate-Threshold Volts VGS(W VDS = VGS,ID =1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS= -t20V 100 nA
Gate-Body Lakage Reverse IGSSR VGS= -20V 100 nA
Zero.Gate Voltage Drain Currnt IDSS1 IDSS2 IDSS3 VDS =100V, VGS = O VDS = 80V, VGS = o VDS = 80V,VGS = O, TC = +1250C 0.025 025 mA
Rated Avalanche Current IAR Time= 20 42 A
Drain-Source On-State Volts VDS(on) VGS = 10V,ID =14A 2.65 V
Drain-Source On Resistance RDS(on) VGS =10V,ID = 9A 18
Tum-On Dday Tima td(on) VDD = 50V,ID = 14A 30
Rise Time PLAse Width = 3Ws 218
Tum-Off Delay Tima td(off) Perrlod = 30Ws, Rg = 25fl 156
FaH Time O s VGS S 10 (See Test Clrcult) 144
Gate-Charge Thre.shold QG(th) 1 4
Gate-Charge On State QG(on) 18 74 nc
Gate-Charge Total OGM VDD = 50V,ID =14A IGSl =IGS2 36 146
Plateau Voltage VGP O s VGS s20 3 14 V
Gate-Charge Source aGS 3 14
Gate-Charge Drain QGD 9 36 ne
Diode Forward Voltage VSD ID =14A, VGD = O 0.6 '8 V
Reverse Recovery Time rr I = 14A; dr7dt = 100NUs TBD ns
Junction-To-Case Rojc 1.67
Junction-Ta-Ambient Reja Free Air OperatIon 60 oc/w
VDO El :=0.75BVDSS v?1c7L:rET IL : FIGURE l. SWITCHING TIME TESTING FIGURE Z CLAMPEDINDUCTIVE SWITCH:NG,ILM


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