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MX7524SE-883B MX7524SE-883B MX7524SE883B Datasheet

Parameters 220CMQ Units Conditions
VFM Max. ForwardVoltage Drop 048 v @ 110A T,=25 0C
(Per Leg) ' See Fig. 1 (1) 0 57 V @220A
040 V @ 110A
0 52 V @220A Ti= 125 0C
IRM Max. Reverse Leakage Current 10 mA Ti= 25 0C
(Per Leg) ' See Fig. 2 (1) 560 mA T1=1250C VR= rated VR
VF(TO; Threshold Voltage 023 V Tj= Tj max
rt Forward Slope Resistance 1 16 m
CT Max. Junction Capacitance (Per Leg) 7400 pF VR = 5VDC, (test signal range 100Khz t0 1Mhz) 250C
Ls TypicaISerieslnductance (PerLeg) 7 0 nH From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate ofChange 10000 VUS (Rated VR)
VRMS InsulationVoltage 1000 V


MX7524SE-883B MX7524SE-883B MX7524SE883B Price

Forward-Current Transfer Ratio Ic = 1.0 Adc, VCE = 4.0 Vdc IC = 20 Adc, VCE = 4.0 Vdc IC = 50 Adc, VCE = 4.0 Vdc hFE 50 30 10 120
Collector-Emitter Saturation Voltage Ic = 20 Adc, IB = 2.0 Adc Ic = 50 Adc, IB = 10 Adc VCE( sat) 1.0 3.0 Vdc
Base-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc VBE(sal) 1.8 Vdc


MX7524SE-883B MX7524SE-883B MX7524SE883B on stock

IIII Per one element Tj=25'C start
j
j
6 iOHZ


Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain- gate Voltage (RGS = 20 kl 600 V
VGS Gate-source Voltage ±30 V
lD Drain Current (continuous) at Te = 25 0C 40 A
JD Drain Current (continuous) at Te = 100 0C 26 A
IDM Drain Current (pulsed) 1 60 A
Ptot Total Dissipation at Te = 25 0C 460 W
Derating Factor 3.6 w/oC
Tstg Storage Temperature -55 t0 150 OC
Ti Max. Operating Junction Temperature 1 50 OC
Vlso Insulation Withhstand Voltage (AC-RMS) 2500 V