| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| MX7528JWP | 160 |
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MX7528JWP Datasheet General Description The K4H560438E / K4H560838E / is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,785,216 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up t0 333Mb/s per pin. I/0 transactions are possible on both edges of DQS. Range of operating fre- quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem- ory system applications. MX7528JWP Price
MX7528JWP on stock This control scheme allows the MAX1733/MAX1734 to provide excellent performance throughout the entire load-current range. When delivering light loads, the high-side switch turns off after the minimum on-time to reduce peak inductor current, resulting in increased efficiency and reduced output voltage ripple. When delivering medium and higher output currents, the MAX1733/MAX1734 extend either the on-time or the off- time, as necessary to maintain regulation, resulting in Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications. The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). |
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