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MX7528LP MX7528LP MX7528LP Datasheet
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is provided by the external address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected. And when this pin is high, Interleaved burst sequence is selected.
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The column and row decoders address the EEPROM array at the clock rate and generate a serial data stream for modulation. This data stream can be up to 128 bits in length. The size of the data stream is user programmable with CBl and can be set t0 96 0r 128 bits. Data lengths of 48 and 64 bits are available by programming the data twice in the array, end-to-end. The column and row decoders route the proper voltage to the array for programming and reading. In the programming modes, each individual bit is addressed serially from bit l to bit 128.
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AO-A8 Address Inputs
RAS Row Address Strobe
UCAS Column Address Strobe Upper Byte Control
LCAS Column Address Strobe Lower Byte Control
WE Write Enable
OE Output Enable
l/01-1/016 Data Input, Output
Vcc +3.3V Supply
VSS OV Supply
NC No Connect


Iicm Symbol Tcst Coudiiion
Collector io base breikdown voIiage V<nR}cd0 k: = -5mA, Lb: = o
Collector io ciniitcr brcokdown volmSe V(nRlcr:o Lc = -50mA. Rnu =
Emiuer io base breakdown volIgC v<nF<}l:uo IE =5iiiA. lc = O
Collecior cuiorf currcnc CB0 VcE: = Jov.lp: = o
DC currenHrausfer ratio hFEi* hFt:Z VCE = -4V, Jc = -IA#* VcE = -4V, Ic = -o.iA*
B;ise io emiicer volidge Vui_ VrE - -4V, k: = -IA*'~
Collemor 10 emicter saluriiuo:71 volmgc VCEihaL) lc - -2A, ILl = -0.2A**
C;diii biindwidil] producc rT V[:E= -4V.1C=f5A**