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MXC14099BCP Datasheet

S\im b	Parameter	Conditions	Ratings	Unit
lT (F~HilSi, lF (FiFilSi	RMS current		39	A
1T (AVl, IF lAV)	Average current	Single-phase, half-wave 180Y'conduction, Tc=93YC	25	A
ITSM, IFSM	Surge (non-repetitive) current	One half c,/cle at 60Hz. peak value	500	A
12t	R for fusing	Value for one cycle of surge current	1 0×100	A2S
di/dt	Critical rate of rise of on-state current	VD=1/2VDRM, IG=0.5A, Ti=125IC	1 00	A
PGM	Peak gate power dissipation		5 0	W
PG (AV)	Average gate power dissipation		0 5	W
VFGM	Peak gate forward voltage		10	V
VRGM	Peak gate reverse voltage		5 0	V
IFGM	Peak gate forward current		2 0	A
1	Junction temperature		-40125	IC
Tstg	Storage temperature		-40125	IC
Vis	Isolation voltage	Charged part to case	2500	V
			1 471.96	N m
		Main terminal screw M5	1520	kg cm
	Mounting torque		1 962.94	N-m
	Mounting torque	Mounting screw M6	2030	kg cm
	Weight	Typical value	160	g

MXC14099BCP Price

Rating	Symbol	10DDA10			Unit
Repetitive Peak Reverse Voltage	VRRM	100			V
Average Rectified Output Current	Io	50Hz	Ta=58'IC41		A
Average Rectified Output Current	Io	Half Sine Wave Resistive Load	T1=13 2'LC (Tl=Lead Temperature	1.0	A
RMS Forward Current	IF (RMS)			1.57	A
Surge Forward Current	IFSM	50Hz Half Sine Wave,lcycle, Non-repetitive		45	A
Op eratin g Ju n ction T emperature Ra n ge	Tjw	40 to+150
Storage Temperature Range	Tstg	40 to+150

MXC14099BCP on stock

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Parameter	Conditions	AD8091A/AD8092A Min Typ Max	Unit
DYNAMIC PERFORMANCE -3 dB Small Signal Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Full Power Response Settling Time t0 0.1%	G = +1, Vo = 0.2 V p-p G = -1, +2, Vo = 0.2 V p-p G = +2, Vo = 0.2 V p-p, RL = 150 Q t0 2.5 V, RF = 402 Q G = -1, Vo = 2 V Step G = +1, Vo = 1 V p-p G = -1, Vo = 2 V Step	70 110 50 17 90 135 65 55	MHz MHz MHz \Ulrs MHz ns
NOISE/DISTORTION PERFORMANCE Total Harmonic Distortion* Input Voltage Noise Input Current Noise Differential Gain Error (NTSC) Differential Phase Error (NTSC) Crosstalk	fc = 5 MHz, Vo = 2 V p-p, G = -1, RL = 100 Q to +1.5 V f= 10 kHz f= 10 kHz G = +2, VCiU = +1 V RL = 150 Q to +1.5 V RL = 1 kQ to +1.5 V G = +2) VCM = +1 V RL = 150 Q to +1.5 V RL = 1 kQ to +1.5 V f= 5 MHz, G = +2	-47 16 600 0.11 0.09 0.24 0.10 -60	dB n\Ux/Hz fA/JHz o/, /o % Degrees Degrees dB
DC PERFORMANCE Input Offset Voltage Offset Drift Input Bias Current Input Offset Current Open-Loop Gain	TiUIN to TMAX TiUIN to TMAX RL = 2 kQ TiUIN to TiVAX RL = 150 Q TMIN to TiUAX	1.6 10 25 10 1.3 2.6 3.25 0.15 0.8 80 96 94 74 82 76	mV mV LNIoC dB dB dB dB
INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio	Vciv[ = 0 V t0 1.5 V	290 1.4 -0.2 to +2.0 72 88	kQ pF V dB
OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current Capacitive Load Drive	RL = 10 kQ to +1.5 V RL = 2 kQ to +1.5 V RL = 150 Q to +1.5 V Vour = +0.5 V to +2.5 V TiUIN to TMAX Sourcing Sinking G = +1	0.01 t0 2.99 0.075 t0 2.9 0.02 t0 2.98 0.20 t0 2.75 0.125 t0 2.875 45 45 60 90 45	V V V mA mA mA mA pF
POWER SUPPLY Operating Range Quiescent Current/Amplifier Power Supply Rejection Ratio	AVs= +0.5 V	3 12 4.2 4.8 68 80	V mA dB
OPERATING TEMPERATURE RANGE		-40 +85	oC

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