PAL16L8-12CFN Datasheet| | mm | inch | | DIM | MIN | TYP | MAX | MIN | TYP | MAX | | A | 5.35 | | 5.65 | 0210 | | 0222 | | c | 3.3 | | 3.8 | 0.130 | | 0.149 | | D | 2.9 | | 3.1 | 0.114 | | 0.122 | | D1 | 1.88 | | 2.08 | 0.074 | | 0.081 | | E | 075 | | 1 | 0.029 | | 0.039 | | F | 1.05 | | 1.25 | 0.041 | | 0.049 | | G | 10.8 | | 11.2 | 0.425 | | 0.441 | | H | 15.8 | | 16.2 | 0.622 | | 0.637 | | L1 | 20.8 | | 21.2 | 0.818 | | 0.834 | | L2 | 19.1 | | 19.9 | 0752 | | 0783 | | L3 | 22.8 | | 23.6 | 0.897 | | 0.929 | | L4 | 40.5 | | 42.5 | 1.594 | | 1.673 | | L5 | 4.85 | | 5.25 | 0.190 | | 0206 | | L6 | 2025 | | 20.75 | 0797 | | 0.817 | | M | 3.5 | | 3.7 | 0.137 | | 0.145 | | N | 2.1 | | 2.3 | 0.082 | | 0.090 | | U | | 4.6 | | | 0.181 | | | | | | | | |
PAL16L8-12CFN Price| Parameters | 16TTS.. | Units | Conditions | | IT(AV, Max.AverageOn-stateCurrent | 10 | A | @ Te = 980 C,1800 conduction halfsine wave | | IRMS Max.RMSOn-stateCurrent | 16 | | ITSM Max.PeakOneCycleNon-Repetitive | 170 | 1 0msSine pulse, rated VRRMapplied | | SurgeCurrent | 200 | 1 0msSine pulse, novoltagereapplied | | 12t Max.12tforfusing | 144 | A2S | 1 0msSine pulse, rated VRRMapplied | | 200 | 1 0msSine pulse,novoltagereapplied | | 12 et Max.12 ftforfusing | 2000 | A2 | t= 0.1 t010ms, novoltage reapplied | | VTM Max.On-stateVoltageDrop | 1 4 | V | @10A,Tj = 250C | | On-state slope resistance t | 24 0 | m | Ti= 1250C | | VT(TO) Threshold Voltage | 1 1 | V | | IRWI/IDM Max.Reverse and Direct | 0 5 | mA | Ti=25 0C | | | LeakageCurrent | 10 | T= 125 0C | VR = rated VRRM/ VDRM | | IH Holding Current | Typ | Max | | Anode Supply = 6V, Resistive load, Initial IT=1A | | | 100 | mA | 16TTS08,16TTS12 | | 100 | 150 | 16TTS16 | | IL Max.LatchingCurrent | 200 | mA | AnodeSupply=6V,Resistiveload | | dv/dt Max. Rate of Rise of off-state Voltage | 500 | VUS | | | di/dt Max. Rate of Rise ofturned-on Current | 150 | A/ps | | | | | | | |
PAL16L8-12CFN on stock| SPECIFICATNONSa | | | | Test Conditions Unless Otherwise Specified | | Limits D Suffix -40 t0 850C | | | Parameter | Symbol | DISCHARGE = -VIN = 0 V Vcc = 10 V, +VIN = 48 V RBIAS = 390 kQ, RoSc = 330 kQ | Tempb | Mind | Type | Maxd | Unit | | Error Amplifier | | Output Current | IOUT | Sink (VFB = 4.5 V) | Room | 0.12 | 0.15 | | mA | | Power Supply Rejection | PSRR | 9.5 V i Vcc i 13.5 V | Room | 50 | 70 | | dB | | Current Limit | | Threshold Voltage | VSOURCE | RL = 100 Q from DRAIN to Vcc VFB=OV | Room | 1.0 | 1.2 | 1.4 | V | | Delay to Outpute | td | RL = 100 Q from DRAIN to Vcc VSOURCE = 1.5 V, See Figure 1 | Room | | 100 | 200 | ns | | Pre-Regulator/Start-Up | | Input Voltage | +VIN | IIN= 10 yA | Room | | | 120 | V | | Input Leakage Current | +IIN | Vcc10V | Room | | | 10 | yA | | Pre-Regulator Start-Up Current | ISTART | Pulse Width i 300 ys, Vcc = 7V | Room | 8 | 15 | | mA | | Vcc Pre-Regulator Turn-Off Threshold Voltage | VREG | IPRE-REGULATOR = 10 yA | Room | 7.8 | 9.4 | 9.7 | V | | Undervoltage Lockout | VUVLO | RL= 100 Q from DRAIN to Vcc See Detailed Description | Room | 7.0 | 8.8 | 9.2 | | VREG, -VUVLO | VDELTA | | Room | 0.3 | 0.6 | | | Supply | | Supply Current | lcc | | Room | 0.45 | 0.6 | 1.0 | mA | | Bias Current | IBIAS | | Room | 10 | 15 | 20 | yA | | Logic | | SHUTDOWN Delaye | tSD | VSOURCE = -VIN, See Figure 2 | Room | | 50 | 100 | | | SHUTDOWN Pulse Widthe | tsw | | Room | 50 | | | | RESET Pulse Widthe | tRW | See Figure3 | Room | 50 | | | ns | | Latching Pulse Widthe SHUTDOWN and RESET Low | tLW | Room | 25 | | | | Input Low Voltage | VIL | | Room | | | 2.0 | V | | Input High Voltage | VIH | | Room | 8.0 | | | | Input Current Input Voltage High | IIH | VIN=10V | Room | | 1 | 5 | | | Input Current Input Voltage Low | l|L | VIN= OV | Room | -35 | -25 | | yA | | MOSFET Switch | | Breakdown Voltage | VBR(DSS) | IDRAIN = 100 yA | Full | 200 | 220 | | V | | Drain-Source On Resistancef | DS(on) | IDRAIN = 100 rTiA | Room | | | 7 | Q | | Drain Off Leakage Current | IDSS | VDRAIN = 100 V | Room | | 5 | 10 | VA | | Drain Capacitance | CDS | | Room | | 35 | | pF | | | | | | | | |
| Parameter | Symbol | Condition | Min | Typc | Max | Unit | | OFF CHARACTERISTICS | | Drain-Source Breakdown Voltage | BVDSS | VGS:OyID:250yA | 30 | | | V | | Zero Gate Voltage Drain Current | IDSS | VDS : 30V VGs : OV | | | 1 | | | Gate-Body Leakage | IGSS | VGS :+20V, VDS : OV | | | +100 | nA | | ON CHARACTERISTICSb | | Gate Threshold Voltage | VGS(th) | VDS:VGs ID:250htA | 1 | | 3 | V | | | | VGs : 10V, ID :7A | | 24 | 30 | mQ | | Drain-Source On-State Resistance | RDS(ON) | VGs :4.5V ID - 3.5A | | 32 | 42 | mQ | | On-State Drain Current | ID(ON) | VDS: 5V VGs: 10V | 30 | | | A | | Forward Transconductance | gFS | VDS: 15V ID :7A | | 8 | | S | | DYNAMIC CHARACTERISTICSc | | Input Capacitance | Ciss | | | 804 | | PF | | Output Capacitance | Coss | VDS:15V VGs: OV f:1.OMHz | | 328 | | PF | | Reverse Transfer Capacitance | CRSS | | 79 | | PF | | SWITCHING CHARACTERISTICSc | | Turn-On Delay Time | IDfONl | VDD : 25V | | 16 | 24 | ns | | Rise Time | l | ID : 1A VGs : lOV, | | 7 | 14 | ns | | Turn-Off Delay Time | tD(OFF) | RGEN:6Q | | 47 | 60 | ns | | Fall Time | tf | | 10 | 15 | ns | | Total Gate Charge | Qg | | | 20 | 24 | nC | | Gate-Source Charge | Qgs | VDS :15V ID : 2A VGs :10V | | 3 | | nC | | Gate-Drain Charge | Qgd | | 6 | | nC | | | | | | | |
|
