| | | TEST CONDITIONS | | | | |
| SYMBOL | PARAMETER | OTHER | Vcc (V) | MIN | TYP. | MAX | UNIT |
| Tamb= 25 IC |
| VIH | HIGH-Ievel input voltage | | 4.5 t0 5.5 | 2.0 | 1.6 | | V |
| VIL | LOW-Ievel input voltage | | 4.5 t0 5.5 | | 1.2 | 0.8 | V |
| VOH | HIGH-Ievel output voltage | VI = VIH or VIL 10 = -20 10 = -4.0 mA | 4.5 4.5 | 4.4 3.84 | 4.5 4.32 | | V V |
| VOL | LOW-Ievel output voltage | VI = VIH or VIL 10 = 20 10 = 4.0 mA | 4.5 4.5 | | 0 0.15 | 0.1 0.26 | V V |
| ILI | input leakage current | VI = Vcc or GND | 5.5 | | | +0.1 | |
| 102 | 3-state output OFF current | VI = VIH or Viu; VO = Vcc or GND; 10 = 0 | 5.5 | | | +0.5 | |
| lcc | quiescent supply current | VI = Vcc or GND; 10 = 0 | 5.5 | | | 2 | |
| Clcc | additional supply current per input | VI = Vcc - 2.1 V; 10 = 0 | 4.5 t0 5.5 | | 120 | 432 | |
| Tamb = -40 to +85 IC |
| VIH | HIGH-Ievel input voltage | | 4.5 t0 5.5 | 2.0 | | | V |
| VIL | LOW-Ievel input voltage | | 4.5 t0 5.5 | | | 0.8 | V |
| VOH | HIGH-Ievel output voltage | VI = VIH or Viu 10 = -20 10 = -4.0 mA | 4.5 4.5 | 4.4 3.84 | | | V V |
| VOL | LOW-Ievel output voltage | VI = VIH or Viu 10 = 20 10 = 4.0 mA | 4.5 4.5 | | | 0.1 0.33 | V V |
| ILI | input leakage current | VI = Vcc or GND | 5.5 | | | +1.0 | |
| 10z | 3-state output OFF current | VI = VIH or Viu; VO = Vcc or GND; 10 = 0 | 5.5 | | | +5.0 | |
| lcc | quiescent supply current | VI = Vcc or GND; 10 = 0 | 5.5 | | | 20 | |
| Q:lcc | additional supply current per input | VI = Vcc - 2.1 V; 10 = 0 | 4.5 t0 5.5 | | | 540 | |
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The HGTG40N6083 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 250C and 1500C.
