| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
PAL18X10J Datasheet
PAL18X10J Price Die aufgefuhrlen Typen sind alle mit einer Schutzdiode in Reihe zum Widerstand und der LED gefertigt. Dies erlaubt auch den Einsatz der Typen an entsprechender Wechselspannung. The specified versions are built with a protection diode in series with the resistor and the LED. Therefore it is also possible to run them at an equivalent alternating voltage. PAL18X10J on stock TEST PROCEDURE Intel has instituted full-speed functional testing at the die level for all SmartDie products. This lavel of tasting is ordinarily performed only after assembly into a package. Each die is tested to the same elec- trical limits as the equivalent packaged unit. The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock l/0 transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications. |
|||||||||||||||||||||||||||||||||||||||||||||
