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PAL20L10AM Datasheet

ation. The device supports SSTL_2 110 low-power standby state, the register will be cleared and d is fully compliant with the JEDEC JC40, the outputs will be driven to a logic low level quickly DR I specifications covering PC1600, PC relative to the time to disable the differential input
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Notes: 7. '_" Solid traces are Daisy Chain patterns on the FBGA package. 2. if_ _ _ _ _" Dash traces are Daisy Chain patterns on the PCB. 3. 'a: 'b'are the input and output of the network for the device. 4. 'c: 'd'are the input and output of a separate network for the support balls. Figure l. FBGA 32 Mb and 64 Mb Silicon Daisy Chain with Matching PCB Schematic (Top View)
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			Ratings
Parameter	Symbol	Conditions	min	typ	max	Unit
	ICBO	VCB=800V, IE=O			10	ccA
Collector Cutoff Current	ICES	VCE=1600V, RBE=O			1 0	mA
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=lOmA, RBE=	800			V
Emitter Cutoff Current	IEBO	VEB=4V, IC=O			1 0	mA

An external PNP transistor can also be used as the pass transistor instead of the P-channel MOSFET. Due to the low current gain of the current amplifier (CA), a high gain Darlington PNP transistor is required to avoid too much charging current error. The gain ofthe current amplifier is around 0.6mV. For eve ry 1 of base current, a 1.6mV of gain error shows up at the inputs of CA. With RPROG = 19.6k (lOOmV across RSENSE), it represents l.67% of error in charging current.

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