| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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PAL20L10VM Datasheet I SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION I ULTRA-FAST AND SOFT RECOVERY iVERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR I HIGH FREQUENCY OPERATION I HIGH REVERSEVOLTAGECAPABILITY PAL20L10VM Price Note : 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Must satisfy bus contention, bus turn around and write recovery requirements. 4. NOP to bank precharging or in idle sate. May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. 6. Refer to "3.3.11 Read with Auto Precharge" in page 29 for detailed information. 7. Refer to "3.3.12 Write with Auto Precharge" in page 30 for detailed information. 8. CKE Low to High transition will re-enable CK, CK and other inputs asynchronously. A minimum setup time must be satisfied before issuing any command other than EXIT. 9. Power-Down and Self-Refresh can be entered only from All Bank Idle state. The Am29PL160C is capable of fast page mode reads and is compatible with the page mode masked ROM read operation. This mode provides 25 ns data accesses from random locations within a page. The page size ofthe Am29PL160C device is 8 words or 16 bytes. Address bits A3-A19 select the appropriate page; address bits AO-A2 (in word mode) or A-l to A2 (in byte mode) determine the specific word/byte within that page. This is an asynchronous operation with the microprocessor supplying the specific word or byte location. |
