1. DESCRIPTION Mitsubishi's Static RAM cards provide large memory capacities on a device approximately the size of a credit card (85.6mmx54mmx3.3mm). The cards use a 8/16 bit data-bus. Available in 64KB, 128KB, 256KB, 512KB, 1 MB, 2 MB and 4 MB capacities, Mitsubishi's SRAM cards conform to the PC Card Standard. Mitsubishi achieved high density memory, while maintaining credit size by using a thin small outline packaging technology (TSOP). The TSOP surpasses conventional memory card chip-on-board packaging technology where larger, surface-mount devices result in a tradeoff between card size and optimum memory density. The TSOP, with external leads spaced on 20-mil centers, is over four times smaller than standard equivalent pin count surface-mount packages. This allows up t0 8 memory ICs (plus interface circuitry) to be mounted in a card that in only 3.3mm thick.
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| | | Ta: | l 1000c | | | VCE = -5 V |
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| | | | Ii ri / | J | TJ-: PULSE | 150C : WIDTH | =300ccS |
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| lSymbol | Parameter | Value | Unit |
| STP36NF06 | STP36NF06FP | |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain-gate Voltage (RGS = 20 kl ) | 60 | V |
| VGS | Gate- source Voltage | ±20 | V |
| ID | Drain Current (continuous) at Tc = 250C | 30 | 18(+) | A |
| ID | Drain Current (continuous) at Tc = 1000C | 21 | 12 | A |
| IDM(cc) | Drain Current (pulsed) | 120 | 72 | A |
| Ptot | Total Dissipation at Tc = 250C | 70 | 25 | W |
| | Derating Factor | 0.47 | 0.17 | w/oc |
| dv/dt(1) | Peak Diode Recovery voltage slope | 20 | V/ns |
| EAS(2) | Single Pulse Avalanche Energy | 200 | mJ |
| Tstg | Storage Temperature | -55 t0 175 | oC |
| Ti | Max. Operating Junction Temperature |
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