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PAL20LBACNS Datasheet Applications The versatility of FRAM technology fits into many diverse applications. Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile. PAL20LBACNS Price
PAL20LBACNS on stock FEATURES 3.OV & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. . All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation (-250C ~ 700C). Extended Temperature Operation (-250C ~ 850C). . 54Balls BOC with 0.8mm ball pitch ( -X : Leaded, -Z : Lead Free).
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