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PAL20R4A-2CNL Datasheet

Symbol Parameter Min.(1) Typ Max Unit
tPLH tPHL Data Propagation Delay (2,3) An to/from Bn 0.12 ns
tPZL tPZH Switch Turn-on Delay BEn or BEn to An/Bn 1.5 5.6 ns
tPLZ tPHZ Switch Turn-off Delay (2) BEn to An/Bn 1.5 4.5 ns


PAL20R4A-2CNL Price

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VDRM Repetitive peak off-state -400R 4501 -600R 6501 -800R 800 V
lT(RMS) ITSM 12t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 12t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature half sine wave; Tmb " 103 0C all conduction angles half sine wave; Tj = 25 aC prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/~s over any 20 ms period -40 13 20 200 220 200 200 5 5 5 20 0.5 150 125 A A A A A2S A/~s A V V w w aC aC


PAL20R4A-2CNL on stock
Thermal and Mechanical Characteristics, Tj = 25 0C unless otherwise specified CharacterIstics Symbol TestCondltions MIn. TVP. Max. Units Thermal Resistance, Case-to-Sink Ro(c_sl Per l/2 Module 0.15 0C/W Thermal Resistance, Junction-to-Case ReO_q Transistor Part 0.31 0C/W Thermal Resistance, Junction-to Case ReO_q Diode Part l.2 0C/W

10ms Single Half Sine-Wave TJ = 1751C
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