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PALC16R8-40WMBC Datasheet

Level Data sheet status! Product status __ Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).


PALC16R8-40WMBC Price

VTHL Input Low Threshold Voltage q 1.4 0.8 V
VTLH Input High Threshold Voltage q 2.0 1.4 V
CVTH Receiver Input Hysteresis q O1 0.4 1O V
RIN Receiver Input Impedance -15V " VA " 15V q 3 5 7 k
trtf Rise or Fall Time (Figures 5, 9) 15 ns
tPLH Input to Output (Figures 5, 9), CTRL = OV CTRL = Vcc q 110 330 800 ns ns
tPHL Input to Output (Figures 5, 9), CTRL = OV CTRL = Vcc q 170 480 800 ns ns


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ltem Symbol Rating Unit
Operating temperature Ta -20 t0 80 oC
Storage temperature Tstg -40 t0 80 oC
Insulation resistance IR 100 (100V DC) M l
Frequency range 1.5 t0 100 MHz


Connect Vcc to a stable source of atleast 20 mA above 17 V for normal operation. Also bypass Vcc directly to GND to absorb supply current spikes required to charge external MOSFET gate capacitances. To prevent inadequate GTDRV signals, these devices will be inhibited unless Vcc exceeds the upper undervoltage lockout threshold and remains above the lower threshold.