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PALC16R8R8-20DMB Datasheet

(5) Local oscillation circuit To reduce spurious radiation, the oscillation level at Pin 8 (OSC) can be adjusted. This is done by adding a resis- tor (several I to several tens of I ) between Pin 8 and the tank circuit. However, when setting the value, take care regarding the oscillation margin as related to the tank cir- cuit Q damp.
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A major source of dark current in devices such as this origi- nates in surface states at the Si-Si02 interface. A unique design and process enables the RA0512J to be run in the "Multi-Pinned Phase" or MPP mode of operation. This helps eliminate dark current generation in the interface surface states. By holding the vertical clocks at negative potential during integration and horizontal signal readout, the surface of the sensing area is inverted. As a result,the surface will not be depleted and surface states will not generate dark current. Dark current densities of less than 50 pa/cm2 have been achieved using the MPP mode of operation, resulting in integration times of more than 30 seconds at room tempera- ture.
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Input data is processed as CD-DA format data wben eD is LOW and as CD-ROM or CD-I format data when CD is HIGH, depending on the scate of ROM. The data is processed as CD-ROM format data wben lis LOW, and as CD-I format data when ROM is HIGH. Note that if a CD-ROM sync pattern is not detected in the input data, the data is processed as CD-DA format data, regardless of whether CD is LOW or HIGH.

Pin	unction	Description	Interface Schematic
1	GND	Connects to module backside ground.
2	DCS IN	RF input to the DCS band. This is a 50 I input, external DC-blocking capacitor required. See application schematic.
3	GND	Connects to module backside ground.
4	GSMIN	RF input to the GSM band. This is a 50 I input. No external DC-block- ing capacitor required. See application schematic.
5	GND	Connects to module backside ground.
6	VCC	Power supply for stages l and 2 0f both the GSM and DCS power amplifiers. External low frequency bypassing capacitor required. See application schematic.
7	GND	Connects to module backside ground.
8	VCC	Power supply for output stages of both the GSM and DCS power ampli- fiers. External low frequency bypassing capacitor required. See appli- cation schematic.
9	GND	Connects to module backside ground.
10	GSM OUT	RF output for the GSM band. This is a 50 I output. External DC-block- ing capacitor required. See application schematic.
11	GND	Connects to module backside ground.
12	DCS OUT	RF output for the DCS band. This is a 50 I output. External DC-block- ing capacitor required. See application schematic.
13	GND	Connects to module backside ground.
14	VAPC	Single input analog power control voltage for the GSM and DCS band.
15	GND	Connects to module backside ground.
16	BAND SELECT	Logic low (GSM enable) or logic high (DCS enable) provides single l0 band selection.
Pkg Base	GND	Module backside ground.

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