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PRODUCTINTRODUCTION The K9F6408XOC is a 66Mbit(69,206,016 bit) memory organized as 16,384 rows(pages) by 528 columns. Spare sixteen columns are located from column address of 512 t0 527. A 528-byte data register is connected to memory cell arrays accommodating data trans- fer between the l/0 buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 16 cells. Total 135168 NAND cells reside in a block. The array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasable 8K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F6408XOC.
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