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PALC22V10B-20DMQ Datasheet

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PALC22V10B-20DMQ Price



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Features 7A, 200V, RDS(on) = 0.7351 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma . Meets Pre-Rad Specifications t0 100KRAD(Si) . Defined End Point Specs at 300KRAD(S1) and 1000KRAD(Si) . Performance Permits Limited Use t0 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically . Survives 2E12 Typically If Current Limited to IDM Photo Current . 5.OnA Per-RAD(Si)/sec Typically Neutron . Pre-RAD Specifications for lE13 Neutrons/cm2 - Usable t0 1E14 Neutrons/cm2 Description Intersil has designed a series of SECOND GENERATION hardened power MOS- FETs of both N and P channel enhancement types with ratings from 100V t0 500V, 1A t0 60A, and on resistance as low as 2sml. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD~Si) with neutron hardness ranging from lE13n/cm2 for 500V product t0 1E14n/cm>'for 100V product. Dose rate hardness (GAMMA DOT) exists for rates t0 1 E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field- effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n0) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.	Package T0-257AA CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol S
Absolute Maximum Ratings (TC = +250C) Unless Otherwise Specified FRS9240D, R, H UNITS Drain-Source Voltage. . . . . . . . . . . . . . . . . .VDS -200 V Drain-Gate Voltage (RGS = 20kI ) ' ' ' ' ' ' . . . . . . . VDGR -200 V Continuous Drain Current Pulsed Drain Current . . . . . . . . . . . . . . . . . . IDM 21 A Gate-Source Voltage . . . . . . . . . . . . . . . . . .VGS +20 V Maximum Power Dissipation Derated Above +250C . . . . . . 0.60 W/oC Inductive Current, Clamped, L = 100ffH, (See Test Figure~ . . . . . . . . . ILM 21 A Continuous Source Current (Body Diode~ . . . . . . . . . . .IS 7 A Pulsed Source Current (Body Diode) . ' ' ' . . . . . . . . . ISM 21 A Operating And Storage Temperature. . . . . . . . TJC, TSTG -55 to +150 0C Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . TL 300 0C

2.622 66 60 2.312 58.72 2.026 51.46 1.880 47.75 2.070 52.58 1.868 4745 2.778 70.56 2.468 6269 2.182 5542 2.036 5151 2.226 56.54 2.024 51.41 2.934 7452 2.624 66.65 2.338 59.38 2.192 5568 2.382 60.50 2.180 55.37 3.090 78.49 2780 7061 2.494 63.35 2.348 59.64 2.538 64.47 2.336 59.33 3.246 82.45 2.936 74 57 2.650 67 31 2.504 63 60 2.694 68.43 2.492 63.30 3.402 86.41 3.092 78.54 2.806 7127 2.660 67.56 2.850 7239 2.648 6726 3.558 90.37 3.248 82.50 2.962 75.23 2.816 71 53 3.006 76.35 2.804 71.22 3.714 94.34 3.404 86.46 3.118 7920 2.972 75.49 3.162 80.31 2.960 75.18 3.870 98.30 3.560 90.42 3.274 83.16 3.128 79.45 3.318 84.28 3116 79.15 4.026 102.3 3.716 94.39 3.430 87.12 3.284 83.41 3.474 88.24 3.272 83.11

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