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PALCE16V8H-25SI5 Datasheet

DIMENSIONS
	INCHES		MILLIIV	ETERS
SYMBOL	MIN	MAX	MIN	MAX
A	0.003	0 007	0 08	0 18
B	0.006		0 15
C		0 005		0 13
D	0.035	0 043	0 89	1 09
E	0.110	0 120	2 80	3 05
F	0 075		1 90
G	0 037		0 95
H	0.047	0 055	1 19	1 40
1	0.083	0 098	2 10	2 49
J	0.014	0 020	0 35	0 50

PALCE16V8H-25SI5 Price

AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnel- ling. The data is programmed using hot electron injection.
PALCE16V8H-25SI5 on stock

XA 16-bit microcontroller
32K/1 K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage (2.7 V-5.5 V),	XA-S3
12C, 2 UARTs, 16 MB address range	XA-S3

Note : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than l ns, (tr/2-0.5)ns should be added to the parameter 3. Assumed input rise and fall time (tr & tf)=lns. If tr & tf is longer than lns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter.

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