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PALCE16V8J-10JC-4 Datasheet

(4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
PALCE16V8J-10JC-4 Price

			Ratings
Parameler	Symbal	Conditions	mln	t	max	Unlt
VDDl logic supply current	IDD1	All aulpuls open, 7.159 MHz cryscal asc+:latoC 8 MHz LC oscilIalor			15	mA
VDD2 analog supply currenl	IDD2	VDDZ=5 V			20	mA
CVIN input leakage current	lakl				1	¨
CVOUT outpul leakag current	l Nak2				1
CTRLl, CTRl2, CTRL3 and OSCIN LOW-level input current	lL	VIN - VSS1	-1
RST, CS, SIN, SCLK, CTRLl, SEPJN, CTRL2 and CTRL3 HIGH-Ievel inprn currenT	llH	VIN=VDOI				¨
SIFI and SCLK LOW-Ievel input voltaga	VIL1		vss - 0,3		0.2VDDI	V
CTRLl, CTRL2, CTRL3 and SEPIN LOW-Ievel input voltage	VIL2		vss - 0.3		0.3VD01	V
RST,S. SIN and SCLK HIGH*levet input vollage	VIFi,		0.8VDD1		VDDl+0.3	V
CTRLl, CTRL2, CTRL3 and SEPIN HIGH-Ievel inpm vollage	VIH2		0.7Vooi		VODI+0.3	V
CVIN composit video input vokage	VINI			20		vp
SYNCIN composite video input vottage	Vir.iz			2.0	2.5	vp
XIN inpul vohage	VIN3	External clock inpui, jIN = 2fsc or 4tsc	0.20		5.0	vp_p
CSYNOUL S'tt\IC and SEPOUT LOW-Ivel oucput voiiag	VOL1	VD01 = 4.5 V, IOL = 1.0 mA			1 0	V
CSYNOUT, SYNC and SEPOUT HIGH-level output vollage	VOH1	VDOt = 4.5 V, 10H = -1.0 mA	35			V
		See nole 1	0 70	O.B2	0.94	V
CVOUT sync voltage	VSN	See noie 2	0.95	1.07	1.19	V
		See no!e l	1.30	1.42	1.54	V
CVOUT pedestal volcage	VPD	See note 2	1.54	1.66	1.78	V
		See nole 1	1.00	1.12	1.24	V
CVOUT LOW-Iavel color burst voltage	VCeL	See note 2	1.25	1.37	1.49	V

PALCE16V8J-10JC-4 on stock

lTYPE	VDSS	RDS(on)	ID
ISTP33N10 ISTP33N10FI	100 V 100 V	< 0.06 < 0.06	33 A 18 A

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock l/0 transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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