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PALCE16V8Q-7SI4 Datasheet

PARAMETER Tj= 250C Tj= 1350C UNITS
Input Noise Voltage (Max.) 0.70 0 85 nVHZ
Differential Input Resistance (Min.) 320 340 Q
Differential Input Capacitance (Max.) 32 34 pF


PALCE16V8Q-7SI4 Price

mm inch
DIM MIN TYP MAX MIN TYP MAX
A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015
e3 17.78 0700
F 229 2.79 0.090 0.110
G O4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 022 0.31 0.009 0.012
M O51 1.27 0.020 0.050
N 10.3 0.406
P 7.8 8.05 0.307 0.317
Q 5.08 0.200


PALCE16V8Q-7SI4 on stock

PAD No. PAD Name X Y Bump size
1 DUMMY -404.0 7303.0 5087
2 OER -404.0 7225.0 8333
3 OER -404.0 7175.0 8333
4 DUMMY -404.0 7125.0 8333
5 VEE -404.0 7075.0 8333
6 VEE -404.0 7025.0 8333
7 VEE -404.0 6975.0 8333
8 VEE -404.0 6925.0 8333
9 DUMMY -404.0 6875.0 8333
10 VDD2 -404.0 6825.0 8333
1 1 VDD2 -404.0 6775.0 8333
12 VDD2 -404.0 6725.0 8333
13 VDD2 -404.0 6675.0 8333
14 DUMMY -404.0 6625.0 8333
15 DUMMY -404.0 6575.0 8333
16 DUMMY -404.0 6525.0 8333
17 DUMMY -404.0 6475.0 8333
18 DUMMY -404.0 6425.0 8333
19 DUMMY -404.0 6375.0 8333
20 DUMMY -404.0 6325.0 8333
21 DUMMY -404.0 6275.0 8333
22 DUMMY -404.0 6225.0 8333
23 DUMMY -404.0 6175.0 8333
24 DUMMY -404.0 6125.0 8333
25 DUMMY -404.0 6075.0 8333
26 DUMMY -404.0 6025.0 8333
27 DUMMY -404.0 5975.0 8333
28 DUMMY -404.0 5925.0 8333
29 DUMMY -404.0 5875.0 8333
30 DUMMY -404.0 5825.0 8333
31 DUMMY -404.0 5775.0 8333
32 DUMMY -404.0 5725.0 8333
33 DUMMY -404.0 5675.0 8333
34 DUMMY -404.0 5625.0 8333
35 DUMMY -404.0 5575.0 8333
36 DUMMY -404.0 5525.0 8333
37 DUMMY -404.0 5475.0 8333
38 DUMMY -404.0 5425.0 8333
39 DUMMY -404.0 5375.0 8333
40 DUMMY -404.0 5325.0 8333
41 DUMMY -404.0 5275.0 8333
42 DUMMY -404.0 5225.0 8333
43 DUMMY -404.0 5175.0 8333
44 DUMMY -404.0 5125.0 8333
45 DUMMY -404.0 5075.0 8333
46 DUMMY -404.0 5025.0 8333
47 DUMMY -404.0 4975.0 8333
48 DUMMY -404.0 4925.0 8333
49 DUMMY -404.0 4875.0 8333
50 DUMMY -404.0 4825.0 8333


ltems Symbols Test Conditions Min Typ. Max Units
VGE=OV VCE=1200V Tc=25'C 1.0 mA
Zero Gate Voltage Collecter Current lcEs VGE:=OV VCE-1200VTc=1250C mA
Gate-Emitter Leackage Current IGES VcE=OV VCE=+20V 200 nA
Gate-Emitter Threshold Voltage VGE(thl VCE=20V lc=lOOmA 3 0 6 0 V
Collecter-Emitter Saturation Voltage VCE fsat) VGE=15V lc=lOOA 2 7 3.5 V
Input Capacitance Cies VGE=OV 18000 pF
Output Capacitance Coes VCE=10V .
Reverse Transfer Capacitance Cres f=lMHz
ton Vcc=600V 0.6 0 8
Turn-on Time tr lc=lOOA 0 4 0.6
toff VGE=+15V 0 8 1 5 Lis
Turn-off Time . RG=9.IQ 0 3 0.5
Diode Forward On-Voltage VF IF=IOOA VGE=OV 2.5 V
Reverse Recovery Time trr IF=IOOA -di/dt=300A/ys VGE=-IOV 200 350 ns


 
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