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PALCE16V8Q15PC Datasheet

TA - 25IC
Av=1 RrRr1 k

			^T	iv
			3\|	iv
	±		U
			l I
			l
		+2.5

PALCE16V8Q15PC Price

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
td(on) tr	Turn-on Delay Time Rise Time	VDD = 50 V ID = 30 A RG = 4.7 I VGS = 10 V (Resistive Load, see fig. 3)		28 100		ns ns
Qg Qgs Qgd	Total Gate Charge Gate-Source Charge Gate-Drain Charge	VDD = 80 V ID = 60 A VGS = 10 V		142 27 59	1 85	nC nC nC

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CHARACTER,ISTIC		SYMBOL	RATING	UNIT
Collector-Base Voltage		VCBO	-100	V
Collector-Emitter Voltage		VCEO	-80	V
Emitter-Base Voltage		VEBO	-7	V
	DC	IC	-5	A
Collector Current	Pulse	iCP	-8	A
Collector Power Dissipation (Tc = 250C)		PC	30	W
Junction Temperature		Tj	150	oc
Storage Temperature Range		Tstg	- 55150	oc

INPUT SIGNALS Analoglnput Configuration The input circuitry of the current and voltage sensor inputs is illustrated in figure 3. These inputs are protected against electrostatic discharge through clamping diodes. The feedback loops from the outputs of the amplifiers A, and Av generate virtual shorts on the signal inputs. Exact duplications of the input currents are generated for the analog signal processing circuitry. The current and voltage sense inputs are identical. Both inputs are differential current driven up to +25pA peak. One of the voltage sense amplifier input terminals is internally connected to GND. This is possible because the voltage sense input is much less sensitive to externally induced parasitic signals compared to the current sense inputs.

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