PALCE22V0H-10JC-51 Datasheet| CHARACTERISTIC | SYMBOL | TEST CONDITIONS | MIN | TYP. | MAX | UNIT | NOTE | | | | | Tj_ 25 0C | | | 10 | | | | Peak Off-State Current | IDRM | VDM= VDRM | Ti= 125 0C | | | 100 | _uA | | On-State Voltage | VTM | ITM= 1.2A | | | 1.5 | V | See Fig.1 | | | MODE I | | | G; Positive, T2; Positive | | | 5 | | | | DC Gate Trigger | I| | VDM = 12 V | G; Negative, T2; Positive | | | 10 | | Current | | IGT | RL = 100 Q | G; Negative, T2; Negative | | | 5 | mA | See Fig.5,7 | | IV | G; Positive, T2; Negative | | | 5 | | | MODE l | | | G; Positive, T2; Positive | | | 1O | V | See Fig.6,8 | | DC Gate Trigger | II | VDM = 12 V | G; Negative, T2; Positive | | | 1.5 | | Voltage | | VGT | RL = 100 Q | G; Negative, T2; Negative | | | 1.0 | | IV | G; Positive, T2; Negative | | | 1O | | Gate Non-Trigger Voltage | VGD | Tj = 125 aC, VDM = 1/2 VDRM | O1 | | | V | | | DC Holding Current | IH | VD = 24 V,lrM = 1 A | | | 10 | mA | | | Critical Rate of Rise of Off-State Voltage | dv/dt | Tj = 125 0C, VDM = 2/3 VDRM Gate Open Circuited Exponential Waveform | | 10 | | V4is | | | Critical Rate of Rise of Commutating Off-State Voltage | (dv/dt)c | Tj = 125 0C, ITM = 1.2 A (diT/dtlc = -0.5 Nms VDM = 400 V | O5 | | | V/ps | | | Steady State | Rrritj-c) | Junction to Case | | | 10 | oc/W | | | Thermal Resistance | Rthcj-a) | Junction to Ambient | | | 120 | oC/w | See Fig. 13 | | | | | | | | | | |
PALCE22V0H-10JC-51 Price| GENERAL CHARACTERISTICS | Limits | Units | | Min. Dielectric Strength, Input-Output | 3750 | VRMS | | Min. Dielectric Strength, Output-to-Output | 1200 | VDC | | Min. Insulation Resistance, Input-to-Output @TA=+250C, 50%RH, 100VDC | 1012 | l | | Max. Capacitance, Input-Output | 5.0 | pF | | Max. Pin Soldering Temperature (10 seconds max.) | +260 | oc | | Ambient Temperature Range: Operating Storage | -40 to +85 -40 to +125 | ac oc | | | |
PALCE22V0H-10JC-51 on stock Collector-Emitter Voltage . . . . . . . . . Collector-Base Voltage. . . . . . . . . . . Emitter-Base Voltage . . . . Collector Current Continuous . . . . . . Operating and Storage (TJ, Tstg) . . . Power Dissipation (single transistor, no heat sink) Power Dissipation (total device). . . . Isolation Voltage . . . . . . . TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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