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PALCE22V10H-15JC- Datasheet

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PALCE22V10H-15JC- Price
The SPI Write command consists is performed with 16 clocks pulses. - bit 0: WRITE bit. The value is 0. - bit l-7: address AD(3:0). This is the address field of the indexed register. - bit 8-15: data Dl(7:0) (write mode). This is the data that will be written inside the device (MSb first)
PALCE22V10H-15JC- on stock

Microstrip Electrical Characteristics at 960 MHz Dimensions: L xW (mm.) Dimensions: L xW (in.)
1 0.075, 50.770 Q 0.505 x 0.053 12.83 X 1.35
Z2 0.114, 50.770 Q 0.765 x 0.053 19.43 X 1.35
3 0.050, 50.770 Q 0.335 x 0.053 8.51 X 1.35
Z4 0.289, 73.660 Q 2.000 x 0.025 50.80 X 0.64
5 0.060, 9.350Q 0.360 x 0.506 9.14 X 12.85
6 0.199, 9.190Q 1.200 x 0.510 30.48 x 12.95
Z7 0.132, 52.470 Q 0.890 x 0.050 22.61 X 1.27
Z8 0.134, 38.020 Q 0.880 x 0.085 22.35 X 2.16
9 0.029, 50.200 Q 0.195 x 0.054 4.95 X 1.37


DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=OV), only a small leakage current flows into the drain and the RF input signal attenuates up t0 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is l mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.