The RF3118 is a high-power, high-efficiency linear ampli- fier lC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread- spectrum systems, and other applications in the 1850MHz t0 1910MHz band. The RF3118 has a digital control line for low power application to reduce the cur- rent drain. The device is self-contained with 50 input and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.
PALCE22V10Z-15JI-4 Price| | | | | | | | | |
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| - iLLtlIN _ ICCIOF' | l (mAi | | | | |
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PALCE22V10Z-15JI-4 on stock| | | | | |
| NUMBER OF PINS | 413 | 4 -12 | 5 -13 | 5 -12 |
| | l RIi R2i R3iRi } 2 3 4n+l RI=R2==Rn | H Hf{ 1 2 3 4 2nI 2n RI=R2==Rn | F l n2+I n+1 RI=R2==Rn | I R:jR2"1:~,, 12 |
| CIRCUIT CONSTRUCTtON | | | | |
| 512 | 513 | 5 ---13 | 511 |
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| ] | Rl R2 R3 Rn | hR2i lRh | | b mm | o | |
| 1 2 3 4 n+I Rl=R2=Rn | 2 3 4 5 n n+I Rl=R?ORIR2 | 1 2 3 4 n/2+2 Ri=R2 0R RIR2 | |
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| I/O No. | Status | Definition by 70h Command | Definition by 71h Command |
| 110 0 | Total Pass/Fail | Pass : "0" Fail : "1" | Pass : "O"m Fail : "1" |
| 110 1 | Plane o Pass/Fail | Must be don't -cared | Pass : "0"(2) Fail : "1" |
| 110 2 | Plane l Pass/Fail | Must be don't -cared | Pass : "0"(2) Fail : "1" |
| 110 3 | Plane 2 Pass/Fail | Must be don't -cared | Pass : "0"(2) Fail : "1" |
| 110 4 | Plane 3 Pass/Fail | Must be don't -cared | Pass : "0"(2) Fail : "1" |
| 110 5 | Reserved | Must be don't -cared | Must be don't-cared |
| 110 6 | Device Operation | Busy : "0" Ready : "1" | Busy : "0" Ready : "1" |
| 110 7 | Write Protect | Protected : "O" Not Protected : "1" | Protected : "O" Not Protected : "1" |
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