PALCE25V12H-15JC Datasheet Copyright@ 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. PALCE25V12H-15JC Price| Mounting Torque, M6 Mounting | 3.54.5 | N-m | | Weight | 310 | Grams | | lsolation Voltage (Main Terminal to Baseplate, AC l min.) Vis | 2500 | Vrms | | * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(m~ "Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). | lxl rating | | | Static Electrical Characteristics, Tj = 25 IC unless otherwise specified | | Characte ristics Sym bol Test Conditions | Min | Typ. Max. Units | | Collector-Cutoff Current ICES VCE = VCES, VGE = OV | | 1 mA | | Gate Leakage Voltage IGES VGE = VGES, VCE = OV | | 0.5GA | | Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V | 4 5 | 6 7.5Volts | | | |
PALCE25V12H-15JC on stock| Test Condition | V1 | R1 | R2 | C1 | | 1 | 1.7 V | 523 Q | Open | 100 pF | | 2 | 4.5 V | 1.8kQ | 1.8kQ | 30 pF | | | | | |
| Transconductance VCE = 20 V, IC = 100 A | gfs | 54 | | | S | | Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Ciss | | 6.5 | | nF | | Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Coss | | 1 | | | Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz | Crss | | 0.5 | | | | | | | |
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