TIMap-18  > PALCE26V12H-15OC-4

suppliers of PALCE26V12H-15OC-4 and PDF data of PALCE26V12H-15OC-4

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

PALCE26V12H-15OC-4 Datasheet

Symbol Parameter Test Conditions Min Typ. Max Unit
V(BR)DSS Drain-source Breakdown Voltage ID = 250 pA, VGS = 0 150 V
IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Tc = 1250C 1 10 pA pA
IGSS Gate-body Leakage Current (VDS = 0) VGS=±20 V ±100 nA


PALCE26V12H-15OC-4 Price

8-l EA[ I SOI C Pl CKA GE jj = 151 )oc


PALCE26V12H-15OC-4 on stock
All rights, including rights created by patent grant or registration of a utility model or design as well Published by as rights of technical modifications are reserved. Delivery subject to availability. Designations may be trademarks, the use of which by third parties for their own purposes may violate the rights of the Fujitsu Siemens Computers trademark owners. http://www fujitsu-siemens com/

Frequency: 1575 MHz+2 MHz
Antenna Gain: * .75 dBic Typical @ zenith
VSWR 1.5:1 Max (Passive); 1.2:1 Typical l.5:1 Max (Active)
Temperature: -400 C to +950 C