Q62702-D108 Datasheet| TYPE NUMBER | SYMBOLS | UF 5400 | UF 5401 | UF 5402 | UF 5404 | LIF 5406 | UF 5407 | UF 5408 | UNITS | | Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 1 | 200 | 400 | 600 | 800 | 1000 | V | | Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | | Maximum D.C Blocking Voltage | VDC | 50 | 100 | 200 | 300 | 600 | 800 | 1000 | V | | Maximum Average Forward Rectified Current .375"9.5mm) lead length @ TA = 50'c | IF(AV) | 3 0 | A | | Peak Forward Surge Current,8.3 ms single half sine - wave superimposed on rated load(JEDEC method) | IFSM | 125 | A | | Maximum Instantaneous Forward Voltage at 3.OA | VF | 1 1 | 1.4 | V | | Maximum D.C Reverse Current @TA = 25'C At Rated D.C Blocking Voltage @TA = 100'C | IR | 10.0 200 | VA VA | | Maximum Reverse Recovery Time( Notel) | TRR | 50 | 75 | nS | | Typical Junction Capacitance ( Note 2) | cJ | 80 | 50 | pF | | Operation Temperate Range | Tj | - 65 to +125 | | | Storage Temperature Range | rSTG | - 65 to +150 | | | | | | | | | | | |
Q62702-D108 Price| VIN= 7.5V | | | | | | | | | | | | | | | | | | | | | | | | | RISING EDGE | | | | | | | | | | | | | | | | | | | | | | FALLING EDGE I I | | | | | | | | | | | | | | | | | | | | | | | | | |
Q62702-D108 on stock| Collector-emitter breakdown voltage | V(BR)CES | VGE=OV, /c=0.2mA | 600 | | | V | | Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, /c=20A Tj = 2 5 YC Tj=175 YC | | 1.5 1.9 | 2.05 | | Diode forward voltage | VF | VGE=OV, /F=20A Tj = 2 5 YC Tj=175 YC | | 1.65 1.6 | 2.05 | | Gate-emitter threshold voltage | VGE(th) | /c=290l_iA,VCE= VGE | 4.1 | 4.9 | 5.7 | | Zero gate voltage collector current | /CES | VCE=600V, VGE=OV Tj = 2 5 YC Tj=175 YC | | | 40 1000 | UA | | Gate-emitter leakage current | /GES | VCE=OV, VGE=20V | | | 100 | nA | | Transconductance | gfs | VCE=20V, /c=20A | | 11 | | S | | Integrated gate resistor | RGin~ | | | Q | | | | | | | |
1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status
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